Thin film multilayer capacitor and mounting method therefor

ABSTRACT

A thin film multilayer capacitor and a method for mounting it are provide wherein the capacitor is small and thin, can furnish a large capacitance, and is hard to be damaged at the time of mounting on a wiring substrate. The thin film multilayer capacitor  10  comprises a substrate  12  and a laminated body  14  formed thereon. The laminated body  14  is formed by laminating electrode layers  16  and dielectric layers  18 . The electrode layers  16  are divided into a first group of electrode layers  16   a  and a second group of electrode layers  16   b  by the dielectric layers  18 . The electrode layers  16   a  of the first group and the electrode layers  16   b  of the second group are laminated in an alternate manner with the dielectric layers  18  intervening therebetween, the plurality of electrode layers  16   a  of the first group are connected with each other, and the plurality of electrode layers  16   b  of the second group are also connected with each other. A protective film  20  is formed on the surrounding surfaces of the laminated body  14 , and solder bumps  24  are formed at the openings  22.

BACKGROUND OF THE INVENTION

[0001]1. Field of the Invention

[0002] The present invention relates to a thin film multilayer capacitorand a mounting method therefor. More particularly, the present inventionrelates to a thin film multilayer capacitor which is small and has arelatively large capacitance, and a mounting method therefor.

[0003]2. Description of the Related Art

[0004] In recent years, in connection with the movement toward a circuithaving a higher density in the field of electronic parts, demand forfurther miniaturization and higher performance of a capacitor or thelike has been increased. As a small capacitor, a multilayer ceramiccapacitor or the like is known. A dielectric ceramic green sheet cut toa specified size is prepared for fabricating such a multilayer ceramiccapacitor. This ceramic green sheet is subjected to printing with anelectrode paste, is dried, is laminated, is compression-bonded and thenis cut into a specified size followed by baking in order to form a chip.The chip is coated with an external electrode paste and then baked toproduce a multilayer ceramic capacitor.

[0005] However, if a multilayer ceramic capacitor is fabricated in sucha method, it is impossible to make dielectric layers thinner than theparticle size of a raw ceramic material powder. Besides, owing to theproblems of short circuits and disconnection at electrodes caused by thedefects of the dielectric layers, it is difficult, at the present levelof technology, to produce a capacitor that has dielectric layers with athickness of 3 μm or less. Thus, there has been a limit in realizing amultilayer ceramic capacitor having a smaller size and a largercapacitance.

[0006] In order to solve such problems, a multilayer ceramic capacitoris proposed in Japanese Unexamined Patent Application Publication56-144523, for example, in which a dielectric body portion is producedon a substrate by a sputtering method. A method for producing a thinfilm and electrode of Al₂O₃, SiO₂, TiO₂ or BaTiO₃ with a sputteringmethod is disclosed.

[0007] However, since materials such as Al₂O₃, SiO₂ and TiO₂ have smalldielectric constants, it is necessary to make the film thickness verysmall if the capacitance of a capacitor is to be increased, entailingproblems related to the reliability of electronic devices such as leakcurrent and dielectric breakdown voltage. Accordingly, use of a materialwith a high dielectric constant such as SrTiO₃(Ba,Sr)TiO₃, PbTiO₃,Pb(Zr,Ti)O₃ and Pb(Mg,Nb)O₃ as well as BaTiO₃ can be considered.However, when such a material with a high dielectric constant is used inorder to obtain a high dielectric constant in the state of a thin film,it is necessary to employ a deposition method such as a MOCVD method orthe like for improving the crystallinity of the thin film whendepositing the film at a high temperature, and since most of thesematerials having high dielectric constants are obtained by utilizing asolid sublimation technology, it is difficult to obtain a materialhaving a high dielectric constant with good reproducibility at the timeof lamination.

[0008] Furthermore, these thin films have a low mechanical strength.Thus, when a thin film multilayer capacitor that is a conventionalmultilayer ceramic capacitor, in which ceramic green sheets arelaminated, is used as a chip part, there is a problem that it tends tobe damaged. This is because it is necessary to move the capacitor whileholding it by its thin film side when the capacitor is to be bonded to awiring substrate at the substrate side. To solve such a problem, it isconceivable to form solder bumps on the surface side of a thin filmwhich is opposite to the substrate side, and to move the thin filmmultilayer capacitor over to a wiring substrate while holding it by thesubstrate side, so as to mount it on the wiring substrate with thesolder bumps.

[0009] However, in order to make progress in the movement towardminiaturization and height reduction of a thin film multilayercapacitor, it is necessary to make the substrate and the solder bumps asthin as possible, and in accordance with this, there is a possibility ofdamaging the substrate itself as a result of an external stress when thethin film multilayer capacitor contacts the wiring substrate in thecourse of the mounting. Furthermore, from the viewpoint of heightreduction, it is desirable to hold the thin film multilayer capacitorwhich is supported by solder bumps in a configuration approximatelyparallel with the wiring substrate.

SUMMARY OF THE INVENTION

[0010] Accordingly, it is one of the primary objects of the presentinvention to provide a thin film multilayer capacitor that is small andthin, can provide a large capacitance, and is hard to damage in thecourse of mounting it on a wiring substrate.

[0011] Also, it is another object of the present invention to provide athin film multilayer capacitor mounting method for mounting such a thinfilm multilayer capacitor on a wiring substrate.

[0012] The present invention is a thin film multilayer capacitorcomprising a substrate and a laminated body made of a plurality ofdielectric layers and electrode layers formed on the substrate, whereinat least three solder bumps for external connection are formed on thesurface of the laminated body which is opposite to the substrate side.

[0013] In such a thin film multilayer capacitor, the electrode layerscomprise a first group of electrode layers and a second group ofelectrode layers which are electrically divided by the dielectriclayers, wherein the electrode layers of the first group are laminatedwith the electrode layers of the second group in an alternate manner,having the dielectric layers intervening therebetween, the dielectriclayers being formed partially over the electrode layers, so that astructure can be realized in which the plurality of electrode layers ofthe first group are electrically connected with each other at portionswhere the dielectric layers are not formed, and the plurality ofelectrode layers of the second group are electrically connected witheach other at the other portions where the electrode layers are notformed.

[0014] Furthermore, a protective film having openings is formed on thesurface of the laminated body so that solder bumps can be formed withsolder applied to connect to the electrode layers at the openings.

[0015] Furthermore, the dielectric layers are made of an oxide thin filmcomprising at least Ba or Sr which is preferably deposited by an MOCVDmethod using a dipivaloylmethanate complex adduct withtriethylenetetramine or tetraethylenepentamine as a raw material.

[0016] The present invention also includes a thin film multilayercapacitor mounting method for mounting any of the thin film multilayercapacitors described above on a wiring substrate, wherein solder bumpsare connected to the wirings on the wiring substrate.

[0017] By forming at least three solder bumps on a laminated body madeof dielectric layers and electrode layers formed on a substrate, thesurface of the laminated body which is opposite to the substrate sidecan be attached onto a wiring substrate. Accordingly, a thin filmmultilayer capacitor can be moved to the wiring substrate while holdingit by the substrate side. Furthermore, by connecting at least threesolder bumps to wirings on the wiring substrate, it is possible to mounta thin film multilayer capacitor on the wiring substrate in a stateparallel with it, by which height reduction can be realized in themounting. Furthermore, since solder bumps make it possible to mount athin film multilayer capacitor on a wiring substrate in a state parallelwith it, the thin film multilayer capacitor can be prevented fromcontacting the wiring substrate, and, therefore, damage on the thin filmmultilayer capacitor by an external stress can be prevented.

[0018] Furthermore, the area in which the electrode layers of the firstgroup and the electrode layers of the second group face each other, ismade larger by laminating the electrode layers of the first group andthe electrode layers of the second group with dielectric layersintervening therebetween, resulting in a capacitor with a largecapacitance.

[0019] Furthermore, the laminated body can be protected by forming aprotective film, and by forming openings on the protective film, soldercan be applied onto the laminated body to form solder bumps. Hereupon,it is preferable to form the openings and the solder bumps in a circularform, and it is desirable to strictly control the amount of solder foruse in the solder bumps.

[0020] Furthermore, the dielectric layers are made of a membercomprising at least Ba or Sr, and when deposition of the member isperformed by a MOCVD method, using, as a raw material, adipivaloylmethanate (DPM) complex adduct with triethylenetetramine ortetraethylenepentamine, M(DPM)₂(tetraene)₂ or M(DPM)₂(triene)₂; M=Ba,Sr, it can be used at a temperature not less than the meltingtemperature of the member, thus making it possible to vaporize it forconveyance, using a conventional bubbling method. Accordingly, thereproducibility at the time of deposition of the dielectric body isimproved, and lamination of thin films with a high dielectric constantis made possible.

[0021] Furthermore, by using solder bumps to mount such a thin filmmultilayer capacitor on a wiring substrate, it is possible to move thethin film multilayer capacitor while holding it by the substrate side.Therefore, damage to the thin film multilayer capacitor can beprevented.

BRIEF DESCRIPTION OF THE DRAWINGS

[0022]FIG. 1 is an illustrative cross-sectional view showing an exampleof the thin film multilayer capacitor according to the presentinvention;

[0023]FIG. 2 is an illustrative view showing an MOCVD apparatus forfabricating the thin film multilayer capacitor according to the presentinvention;

[0024]FIG. 3 is a view showing BST thin film patterns fabricated in theExample;

[0025]FIG. 4 is a view showing a Pt film pattern fabricated in theExample;

[0026]FIG. 5 is a view showing another Pt film pattern fabricated in theExample;

[0027]FIG. 6 is a view showing still another Pt film pattern fabricatedin the Example;

[0028]FIG. 7 is a view showing a deposition pattern of the protectivefilm fabricated in the Example;

[0029]FIG. 8 is a plan view showing a wiring layer pattern on a wiringsubstrate on which the thin film multilayer capacitor fabricated in theExample is to be mounted; and

[0030]FIG. 9 is a front illustrative view showing the wiring substrateon which the thin film multilayer capacitor as shown in FIG. 8 ismounted.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0031] The above-described purposes, other purposes, features andadvantages of the present invention will be made clearer by thefollowing detailed description of the embodiments of the presentinvention with reference to the drawings.

[0032]FIG. 1 is an illustrative cross-sectional view showing an exampleof the thin film multilayer capacitor according to the presentinvention. A thin film multilayer capacitor 10 comprises a substrate 12.An R-plane sapphire substrate or the like is used for the substrate 12,for example. A laminated body 14 is formed on the substrate 12. Thelaminated body 14 is formed by laminating electrode layers 16 anddielectric layers 18. Pt or the like is used for the electrode layers16, for example. The layers are formed by a sputtering method or thelike. Furthermore, as the dielectric layers 18, an oxide thin filmcomprising at least Ba or Sr is used. For example, (Ba,Sr)TiO₃ or thelike is used. These dielectric layers 18 are formed by an MOCVD methodor the like. The electrode layers 16 are formed with a first group of aplurality of electrode layers 16a and a second group of a plurality ofelectrode layers 16 b divided by the dielectric layers 18.

[0033] The electrode layers 16 a of the first group are formed on oneside in the lengthwise direction of the substrate 12, and the electrodelayers 16 b of the second group are formed on the other side in thelengthwise direction of the substrate 12. The electrode layers 16 a ofthe first group and the electrode layers 16 b of the second group arelaminated in an alternate manner with the dielectric layers 18intervening therebetween at the center of the substrate 12. Theseelectrode layers 16 a of the first group and the electrode layers 16 bof the second group are in a form of a plurality of layers by asputtering method or the like. Therefore, at the portions where thedielectric layers 18 are not formed, the plurality of electrode layers16 a of the first group are electrically connected with each other, andthe plurality of electrode layers 16 b of the second group areelectrically connected with each other.

[0034] A protective film 20 is formed on the surrounding surfaces of thelaminated body 14. As the protective film 20, a silicon oxide film orthe like is used, for example. Such a film is formed by a plasma CVDmethod or the like. For example, four circular openings 22 are formed inthe protective film 20 on a surface side of the laminated body 14, thesurface side being opposite to the side of the substrate 12.

[0035] The first group of electrode layers 16 a and the second group ofelectrode layers 16 b are exposed by these openings 22, and solder bumps24 are formed by placing solder on these portions. It is preferable tostrictly control the amount of solder to be placed on the openings 22 ofthe protective film 20.

[0036] With this type of thin film multilayer capacitor 10, a very thinlaminated body 14 can be obtained by forming the electrode layers 16 andthe dielectric layers 18 by an MOCVD method, a sputtering method, or thelike. When a thin laminated body 14 such as this is formed, thesubstrate 12 can be made thinner, making it possible to fabricate a thinfilm multilayer capacitor 10 which is smaller and thinner as a whole.Even with such a thin film multilayer capacitor which is small and thinas this, by laminating the electrode layers 16 a of the first group andthe electrode layers 16 b of the second group in an alternate mannerwith the dielectric layers 18 intervening therebetween, the area inwhich these electrode layers face each other, is made larger, resultingin a capacitor with a larger capacitance.

[0037] Furthermore, a member comprising at least Ba or Sr is used infabricating dielectric layers 18. When a dipivaloylmethanate complexadduct with triethylenetetramine or tetraethylenepentamine is used as araw material, it can be used at a temperature not less than the meltingpoint of the member, thus making it possible to vaporize it forconveyance, using a conventional bubbling method. Accordingly, thereproducibility at the time of deposition of the dielectric body isimproved, and lamination of thin films with a high dielectric constantcan be made possible.

[0038] Furthermore, since solder bumps 24 are formed on the laminatedbody 14, it is possible to mount the thin film multilayer capacitor 10on a wiring substrate by connecting the solder bumps 24 to the wiringsformed on the wiring substrate. Thus, it is possible to move the thinfilm multilayer capacitor 10 while holding it by the side of substrate12 at the time of mounting, preventing damage on the laminated body 14during the movement. Since this way of movement while holding it by theside of substrate 12 is made possible, automatic mounting is easilyrealized.

[0039] Furthermore, since four solder bumps 24 are formed, it ispossible to mount the thin film multilayer capacitor 10 in a way thatthe thin film multilayer capacitor 10 is placed in a configurationparallel with the wiring substrate. Accordingly, height reduction can berealized when the thin film multilayer capacitor 10 is mounted.Furthermore, since it is possible to place the thin film multilayercapacitor 10 in parallel with the wiring substrate, it is possible toprevent the thin film multilayer capacitor 10 from contacting the wiringsubstrate, thus preventing damage on the thin film multilayer capacitor10 by an external stress.

EXAMPLES

[0040] An MOCVD apparatus 30 was prepared as shown in FIG. 2 forfabricating a (Ba,Sr)TiO₃ thin film (referred to as BST thin film,hereafter). The MOCVD apparatus 30 includes three raw materialcontainers 32, in which molten raw material liquids are filled. Intothese raw material containers 32, an Ar gas as a carrier gas isintroduced via mass flow controllers 34. The evaporated molten rawmaterial liquids are transported by the carrier gas to a mixer 36 to bemixed. The raw materials thus mixed are sent to a deposition chamber 38.At that time, O₂ gas is also sent to the chamber 38 via a mass flowcontroller 40. The interior of the deposition chamber 38 is kept at alow pressure state with a booster pump 42 and a rotary pump 44. A BSTthin film is formed on a substrate 50 by bombarding the substrate 50with the gas mixture under that condition. It is noted that the areaenclosed by the dotted lines from the raw material containers 32 up tothe deposition chamber 38 is kept at a high temperature so that the rawmaterials are conveyed to the deposition chamber 38 while kept in a gasstate.

[0041] An R-plane sapphire (Al₂O₃) substrate which is 0.1 mm inthickness and 2 inches by 2 inches in size was prepared for forming aBST thin film using this MOCVD apparatus 30. BST thin films 52 having apattern as shown in FIG. 3 were formed using a metal mask and under theconditions described in Table 1. The deposition time was 75 minutes andthe film thickness was 120 nm. It is noted that the dotted lines in FIG.3 indicate the sections to be cut, and the trimming allowance was 0.1mm. It is also noted that the dimensions as shown in FIG. 3 through toFIG. 7 are in mm units. TABLE 1 Ba raw material Ba(DPM)₂(tetraene)₂Temperature of the Ba evaporator 120° C. Amount of the Ba evaporatorcarrier gas (Ar) 100 ml/min flow Sr raw material Sr(DPM)₂(triene)₂Temperature of the Sr evaporator 110° C. Amount of the Sr evaporatorcarrier gas (Ar) flow 50 ml/min Ti raw material Ti(O-i-C₃H₇)₄Temperature of the Ti evaporator 40° C. Amount of the Ti evaporatorcarrier gas (Ar) flow 25 ml/min Amount of the O₂ gas flow 700 ml/minTemperature of the evaporator 150° C. Deposition temperature 650° C.Pressure in the deposition chamber 1.3 kPa Deposition time 75 min

[0042] To be noted is that a Pt film 54 was formed by a sputteringmethod with a pattern as shown in FIG. 4, before performing depositionof the BST thin film 52. The dimensions indicated in FIG. 4 through toFIG. 7 conform to those obtained after performing the cutting along thesections to be cut as shown by the dotted lines in FIG. 3. An RFsputtering device was used for the Pt film deposition. The depositiontime was 100 seconds and the film thickness was about 150 nm. TABLE 2Pressure before deposition 6.7 × 10⁻⁴ Pa Pressure at deposition 0.67 PaAr flow amount 10 ml/min RF power 250 W Deposition temperature 70° C.

[0043] By forming a Pt film 54 with a pattern as shown in FIG. 4 on asubstrate 50, and forming a BST thin film 52 with a pattern as shown inFIG. 3 thereover, a state is realized in which the Pt film 54 is exposedfrom the BST thin film 52 only at one side in the lengthwise directionof the substrate 50 after cutting. In this state, Pt films 56 a and 56 bwere formed with a pattern as shown in FIG. 5 and under the conditionsdescribed in Table 2. The deposition time was 80 seconds. The filmthickness was adjusted to be 120 nm, similar to that of the BST thinfilm 52. Therefore, the Pt films 54 and 56 a were connected electricallywith each other at one end side in the lengthwise direction of thesubstrate 50.

[0044] Next, a Pt film 58 with a pattern as shown in FIG. 6 was formedunder the conditions described in Table 2. The deposition time was 90seconds. Therefore, the Pt films 56 b and 58 were connected electricallywith each other at the other side in the lengthwise direction of thesubstrate 50 after cutting. Then, a BST thin film 52 was formed over itto have a pattern as shown in FIG. 3. Therefore, a state was realized inwhich the Pt film 56 a was exposed from the BST thin film 52 at one sidein the lengthwise direction of the substrate 50, and the Pt film 58 wasexposed from the BST thin film 52 at the other side. Furthermore, a BSTthin film 52 on a lower layer was connected to a BST thin film 52 on itsupper layer at the end portion of the Pt film 58 which is at one side inthe lengthwise direction of the substrate 50.

[0045] As described above, over the substrate 50, a Pt film 54, a BSTthin film 52, Pt films 56 a and 56 b, a Pt film 58, a BST thin film 52 .. . , a BST thin film 52, Pt films 56 a and 56 b, are sequentiallyformed, and a Pt film 54 or a Pt film 58 was formed at the end. A thinfilm laminated body having 15 layers of BST thin films 52 was thusfabricated. The thin film laminated body thus obtained was treated at650° C. in an oxygen atmosphere for three hours. Next, a silicon oxidefilm was deposited as a protective film, using a plasma CVD method andunder the conditions described in Table 3, in order to cover the wholesurfaces of the dielectric layers and the electrode layers. TABLE 3 Siraw material TEOS(Si(OC₂H₅)₄) TEOS flow amount 100 ml/min O₂ gas flowamount 5,000 ml/min Substrate temperature 350° C. Chamber pressure 667Pa Film thickness 200 nm

[0046] Furthermore, a resist having four openings 60 was formed as shownin FIG. 7, the silicon oxide film at the openings was removed by iontrimming, and cutting was performed along the dotted lines as shown inFIG. 3. After that, solder was placed on the parts where the siliconoxide film was removed to form solder bumps. As a result, 3,735 piecesof thin film multilayer capacitors having a structure as shown in FIG. 1could be fabricated.

[0047] Next, a wiring substrate 72 having wiring layer pieces 70metallized thereon as shown in FIG. 8 was prepared. On this wiringsubstrate 72, the wiring layer pieces 70 were formed at a distance fromeach other so that they correspond to the locations of the solder bumpsof the thin film multilayer capacitor. Accordingly, the thin filmmultilayer capacitor was connected to the wiring layer pieces 70 bysolder reflowing as shown in FIG. 9. In this way, 100 pieces of thinfilm multilayer capacitors were connected to the wiring substrate 72,and were subjected to measurement of capacitance and tan δ at 1 kHz. Theresults are shown in Table 4. TABLE 4 Capacitance Average value 0.11 μFCV value 2.5% tan δ Average value 1.5% CV value 2.2% Short circuit rate3%

[0048] As is understood from Table 4, a capacitance of 0.1 μF or morewas obtained with the thin film multilayer capacitor having 15 layers ofBST thin film. Furthermore, the relative dielectric constant of the BSTthin films calculated from this characteristic value is 600 or more,indicating that BST thin films having a high dielectric constant wereobtained with a good reproducibility.

[0049] Furthermore, the height of this thin film multilayer capacitorconnected to the wiring substrate is about 0.12 mm, providing acapacitor which is very low in height. If one layer of this BST thinfilm is added to the thin film multilayer capacitor, it results in anincrease of only 270 nm in thickness. Therefore, a thin film multilayercapacitor having a larger capacitance can be obtained by increasing thenumber of the laminated layers.

[0050] According to the present invention, it is possible to obtain athin film multilayer capacitor which is small, thin, and of a largecapacitance. Furthermore, when this thin film multilayer capacitor ismounted on a wiring substrate, it is possible to move the capacitor overto the wiring substrate while holding it by the substrate side so thatdamage on the thin film multilayer capacitor is prevented at the time ofmovement. Furthermore, it is possible to mount the thin film multilayercapacitor without contacting the wiring substrate and keeping it in aconfiguration parallel with the wiring substrate, so that damages on thethin film multilayer capacitor by an external stress can be prevented.

What is claimed is:
 1. A thin film multilayer capacitor comprising: asubstrate and a laminated body comprising a plurality of dielectriclayers and electrode layers on said substrate; the laminated body havinga substrate side and a surface side opposite the substrate side; whereinthere are at least three solder bumps adapted for external connection onthe surface side of said laminated body.
 2. A thin film multilayercapacitor according to claim 1 , wherein said electrode layers comprisea plurality of first electrode layers and a plurality of secondelectrode layers which are electrically isolated by said dielectriclayers, a first electrode layer being laminated with a second electrodelayer in an alternate manner with a dielectric layer lying therebetweenand partially covering said first and second electrode layers so thatsaid plurality of first electrode layers are electrically connected witheach other at portions where said dielectric layers are not present, andsaid plurality of second electrode layers are electrically connectedwith each other at the other portions where said dielectric layers arenot present.
 3. A thin film multilayer capacitor according to claim 2 ,having a protective film which has openings on the surface side of saidlaminated body, and wherein each of said solder bumps electricallyconnect to an electrode layer at said openings.
 4. A thin filmmultilayer capacitor according to claim 3 , wherein said dielectriclayers comprise a MOCVD oxide thin film comprising at least one of Baand Sr.
 5. A thin film multilayer capacitor according to claim 4 ,wherein said MOCVD oxide thin film is made from a dipivaloylmethanatecomplex adduct with a triethylenetetramine or tetraethylenepentamine rawmaterial.
 6. A thin film multilayer capacitor according to claim 1 ,having a protective film which has openings on the surface side of saidlaminated body, and wherein each of said solder bumps electricallyconnect to an electrode layer at said openings.
 7. A thin filmmultilayer capacitor according to claim 6 , wherein said dielectriclayers comprise a MOCVD oxide thin film comprising at least one of Baand Sr.
 8. A thin film multilayer capacitor according to claim 7 ,wherein said MOCVD oxide thin film is made from a dipivaloylmethanatecomplex adduct with a triethylenetetramine or tetraethylenepentamine rawmaterial.
 9. A thin film multilayer capacitor mounting comprising a thinfilm multilayer capacitor according to claim 8 and a wiring substratehaving wirings, wherein said solder bumps are electrically connected towirings on said wiring substrate.
 10. A thin film multilayer capacitormounting comprising a thin film multilayer capacitor according to claim7 and a wiring substrate having wirings, wherein said solder bumps areelectrically connected to wirings on said wiring substrate.
 11. A thinfilm multilayer capacitor mounting comprising a thin film multilayercapacitor according to claim 6 and a wiring substrate having wirings,wherein said solder bumps are electrically connected to wirings on saidwiring substrate.
 12. A thin film multilayer capacitor mountingcomprising a thin film multilayer capacitor according to claim 5 and awiring substrate having wirings, wherein said solder bumps areelectrically connected to wirings on said wiring substrate.
 13. A thinfilm multilayer capacitor mounting comprising a thin film multilayercapacitor according to claim 4 and a wiring substrate having wirings,wherein said solder bumps are electrically connected to wirings on saidwiring substrate.
 14. A thin film multilayer capacitor mountingcomprising a thin film multilayer capacitor according to claim 3 and awiring substrate having wirings, wherein said solder bumps areelectrically connected to wirings on said wiring substrate.
 15. A thinfilm multilayer capacitor mounting comprising a thin film multilayercapacitor according to claim 2 and a wiring substrate having wirings,wherein said solder bumps are electrically connected to wirings on saidwiring substrate.
 16. A thin film multilayer capacitor mountingcomprising a thin film multilayer capacitor according to claim 1 and awiring substrate having wirings, wherein said solder bumps areelectrically connected to wirings on said wiring substrate.
 17. A methodof making a thin film multilayer capacitor mounting comprising providinga thin film multilayer capacitor according to claim 1 and a wiringsubstrate having wirings, positioning said solder bumps so that they canbe electrically connected to wirings on said wiring substrate, andelectrically connecting said solder bumps to said wirings.
 18. A methodof making a thin film multilayer capacitor mounting comprising providinga thin film multilayer capacitor according to claim 2 and a wiringsubstrate having wirings, positioning said solder bumps so that they canbe electrically connected to wirings on said wiring substrate, andelectrically connecting said solder bumps to said wirings.
 19. A methodof making a thin film multilayer capacitor mounting comprising providinga thin film multilayer capacitor according to claim 3 and a wiringsubstrate having wirings, positioning said solder bumps so that they canbe electrically connected to wirings on said wiring substrate, andelectrically connecting said solder bumps to said wirings.
 20. A methodof making a thin film multilayer capacitor mounting comprising providinga thin film multilayer capacitor according to claim 6 and a wiringsubstrate having wirings, positioning said solder bumps so that they canbe electrically connected to wirings on said wiring substrate, andelectrically connecting said solder bumps to said wirings.